This resulted inside a diminished work perform as well as development of the Schottky Call in between the BrGO and n-style Si substrate. Due to the upper proportion of B-C and B-C3 bonding from the BrGO/Si product than that during the rGO/Si, the lessened Schottky barrier peak in the BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/